Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.Comment: 11 pages, 3 figures, to be published in Appl. Phys. Let

Determining the Electronic Properties of Individual Nanointerfaces by Combining Intermittent AFM Imaging and Contact Spectroscopy

A method to determine the electronic properties at nanointerfaces or of nanostructures by utilizing intermittent contact atomic force microscopy and contact spectroscopy in one system is developed. By combining these two methods, the integrity of the interface or structure is maintained during imaging, while the extraction of the electronic information is obtained with contact spectroscopy. This method is especially vital for understanding interfaces between metal nanoparticles and substrates, where the nanoparticles are not tethered to the surface and can be combined with new and evolving techniques of thermal drift compensation to allow for a larger range of experiments on nanointerfaces and nanostructures in ambient environments. An experimental probe for quantifying the properties of individual interfaces with diameters in the range of 20 to 100 nm is developed, which is based on scanning probe microscopy

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained.Comment: 14 pages, 4 figure

Probing Physical Properties at the Nanoscale

Everyday devices ranging from computers and cell phones to the LEDs inside traffic lights exploit quantum mechanics and rely on precisely controlled structures and materials to function optimally. Indeed, the goal in device fabrication is to control the structure and composition of materials, often at the atomic scale, and thereby fine-tune their properties in the service of ever-more-sophisticated technology. Researchers have imaged the structures of materials at atomic scales for nearly half a century, often using electrons, x rays, or atoms on sharp tips (see the article by Tien Tsong in PHYSICS TODAY, March 2006, page 31). The ability to survey properties of the materials has proven more challenging. In recent years, however, advances in the development of scanning probe microscopy have allowed researchers not only to image a surface, but also to quantify its local characteristics— often with a resolution finer than 10 nm. We highlight several SPM techniques here, with an emphasis on those that address electronic and dielectric properties of materials and devices

Contrast mechanism maps for piezoresponse force microscopy

Piezoresponse force microscopy (PFM) is one of the most established techniques for the observation and local modification of ferroelectric domain structures on the submicron level. Both electrostatic and electromechanical interactions contribute at the tip-surface junction in a complex manner, which has resulted in multiple controversies in the interpretation of PFM. Here we analyze the influence of experimental conditions such as tip radius of curvature, indentation force, and cantilever stiffness on PFM image contrast. These results are used to construct contrast mechanism maps, which correlate the imaging conditions with the dominant contrast mechanisms. Conditions under which materials properties can be determined quantitatively are elucidated

Scanning Impedance Microscopy: From Impedance Spectra to Impedance Images

Impedance spectroscopy has long been recognized as one of the major techniques for the characterization of ac transport in materials. The primary limitation of this technique is the lack of spatial resolution that precludes the equivalent circuit elements from being unambiguously associated with individual microstructural features. Here we present a scanning probe microscopy technique for quantitative imaging of ac and dc transport properties of electrically inhomogeneous materials. This technique, referred to as Scanning Impedance Microscopy (SIM), maps the phase and amplitude of local potential with respect to an electric field applied across the sample. Amplitude and phase behavior of individual defects can be correlated with their transport properties. The frequency dependence of the voltage phase shift across an interface yields capacitance and resistance. SIM of single interfaces is demonstrated on a model metal-semiconductor junction. The local interface capacitance and resistance obtained from SIM measurements agrees quantitatively with macroscopic impedance spectroscopy. Superposition of a dc sample bias during SIM probes the C-V characteristics of the interface. When combined with Scanning Surface Potential Microscopy (SSPM), which can be used to determine interface I-V characteristic, local transport properties are completely determined. SIM and SSPM of polycrystalline materials are demonstrated on BiFeO3 and p-doped silicon. An excellent agreement between the properties of a single interface determined by SIM and traditional impedance spectra is demonstrated. Finally, the applicability of this technique for imaging transport behavior in nanoelectronic devices is illustrated with carbon nanotube circuit

High frequency Scanning Gate Microscopy and local memory effect of carbon nanotube transistors

We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to image changes in the impedance of swCN-FET circuits induced by the SGM-tip gate. In contrast to earlier reports, the results of both experiments are consistent with a simple RC parallel circuit model of the swCN-FET, with a time constant of 0.3 ms. We also use the SGM tip to show the local nature of the memory effect normally observed in swCN-FETs, implying that nanotube-based memory cells can be miniaturized to dimensions of the order of tens of nm.Comment: 7 pages, 3 figures, to appear in Nano Letter

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

In order to determine the origin of image contrast in piezoresponse force microscopy (PFM), analytical descriptions of the complex interactions between a small tip and ferroelectric surface are derived for several sets of limiting conditions. Image charge calculations are used to determine potential and field distributions at the tip-surface junction between a spherical tip and an anisotropic dielectric half plane. Methods of Hertzian mechanics are used to calculate the response amplitude in the electrostatic regime. In the electromechanical regime, the limits of strong (classical) and weak (field-induced) indentation are established and the relative contributions of electroelastic constants are determined. These results are used to construct ‘‘piezoresponse contrast mechanism maps’’ that correlate the imaging conditions with the PFM contrast mechanisms. Conditions for quantitative PFM imaging are set forth. Variable-temperature PFM imaging of domain structures in BaTiO3 and the temperature dependence of the piezoresponse are compared with Ginzburg-Devonshire theory. An approach to the simultaneous acquisition of piezoresponse and surface potential images is proposed

Local Polarization, Charge Compensation, and Chemical Interactions on Ferroelectric Surfaces: a Route Toward New Nanostructures

The local potential at domains on ferroelectric surfaces results from the interplay between atomic polarization and screening charge. The presence of mobile charge affects surface domain configuration, switching behavior, and surface chemical reactions. By measuring the temperature and time dependence of surface potential and piezo response with scanning probe microscopies, thermodynamic parameters associated with charge screening are determined. This is illustrated for the case of BaTiO3 (100) in air, for which the charge compensation mechanism is surface adsorption and enthalpy and entropy of adsorption are determined. The local electrostatic fields in the vicinity of the domains have a dominant effect on chemical reactivity. Photoreduction of a large variety of metals can be localized to domains with the appropriate surface charge. It has been demonstrated that proximal probe tips can be used to switch polarization direction locally. Combining the ability to \u27write\u27 domains of local polarization with domain specific reactivity of metals, vapors of small molecules, and organic compounds leads to a new approach to fabricating complex nanostructures

Defect-Mediated Adsorption of Methanol and Carbon Dioxide on BaTiO\u3csub\u3e3\u3c/sub\u3e(001)

The surface chemistry of single crystal barium titanate (BaTiO3) has been studied using temperature programmed desorption (TPD). TPD measurements were performed with several probe molecules, including methanol and carbon dioxide. The role of oxygen vacancies in the adsorption and reaction of these molecules was examined by annealing the crystal under oxidizing or reducing conditions prior to performing TPD. It is shown that the adsorption and reaction of methanol and carbon dioxide are enhanced on BaTiO3(001) by annealing the crystal under reducing conditions